Tunable thin film acoustic resonators and method for making the same

ABSTRACT

An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si 3  N 4  membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.

FIELD OF THE INVENTION

The present invention relates to acoustic resonators, and moreparticularly, to resonators that may be used as filters for electroniccircuits.

BACKGROUND OF THE INVENTION

The need to reduce the cost and size of electronic equipment has led toa continuing need for ever smaller filter elements. Consumer electronicssuch as cellular telephones and miniature radios place severelimitations on both the size and cost of the components containedtherein. Many such devices utilize filters that must be tuned to precisefrequencies. Hence, there has been a continuing effort to provideinexpensive, compact filter units.

One class of filter element that has the potential for meeting theseneeds is constructed from acoustic resonators. These devices use bulklongitudinal acoustic waves in thin film piezoelectric (PZ) material. Inone simple configuration, a layer of PZ material is sandwiched betweentwo metal electrodes. The sandwich structure is suspended in air bysupporting it around the perimeter. When an electric field is createdbetween the two electrodes via an impressed voltage, the PZ materialconverts some of the electrical energy into mechanical energy in theform of sound waves. The sound waves propagate in the same direction asthe electric field and reflect off of the electrode/air interface.

At the mechanical resonance, the device appears to be an electronicresonator; hence, the device can act as a filter. The mechanicalresonant frequency is that for which the half wavelength of the soundwaves propagating in the device is equal to the total thickness of thedevice for a given phase velocity of sound in the material. Since thevelocity of sound is many orders of magnitude smaller than the velocityof light, the resulting resonator can be quite compact. Resonators forapplications in the GHz range may be constructed with physicaldimensions less than 100 μm in diameter and few μm in thickness.

Prior art resonators have suffered from a number of problems. The firstproblem is the inability to tune the resonator without lowering the Q ofthe resonator. As noted above, the resonant frequency is determined bythe thickness of the resonator. The thickness of the PZ film is fixed atfabrication; hence, the resultant resonance frequency is also fixed.Since there are variations in thickness from device to device resultingfrom manufacturing tolerances, some method for adjusting the resonancefrequency of each device is needed.

Several methods have been suggested for altering the resonance frequencyafter the device has been constructed. For example, a varactor diode canbe connected in series with the resonator. The varactor is then turnedto change the resonance frequency of the series combination.Unfortunately, varactor diodes have inherently low Q values which, inturn, reduce the Q value of the resonator varactor combination.

A second problem with prior art resonators lies in the materials used toconstruct the electrodes. The acoustic path is determined by thedistances between the outer edges of the electrodes, i.e., theelectrode/air interface. Hence, the sound waves must pass through theelectrodes as well as the PZ material. As a result, the acousticproperties of the electrodes become important. In addition, the ease offabrication of the device must also be taken into account, since thedevices are fabricated by methods that are similar to those used insemiconductor device fabrication.

The most common electrode materials are aluminum and gold. Thesematerials are preferred because of the ease of integration of thematerials into the fabrication process. Aluminum metalization iscommonly used in semiconductor fabrication processes; hence, itsmethodology is well understood. In addition, aluminum is less expensiveand outperforms gold from an acoustic point of view.

Aluminum has two disadvantages. First, it is difficult to selectivelyetch aluminum. Selective etching is less of a concern in semiconductorfabrication than in resonator fabrication, since the aluminum is usuallydeposited on materials which are compatible with previously knownselective etch processes. In resonator fabrication, the electrode layersare preferably created by etching. Second, aluminum has relatively highthermal elastic losses. These losses reduce the performance of theresonator.

Broadly, it is the object of the present invention to provide animproved thin film acoustic resonator.

It is a further object of the present invention to provide an acousticresonator that may be tuned after fabrication.

It is a still further object of the present invention to provide anacoustic resonator with electrodes constructed from materials havingsuperior properties than the prior art aluminum electrodes.

These and other objects of the present invention will become apparent tothose skilled in the art from the following detailed description of theinvention and the accompanying drawings.

SUMMARY OF THE INVENTION

The present invention comprises an acoustical resonator comprising topand bottom electrodes that sandwich a PZ layer. The resonance frequencyof the acoustical resonator may be adjusted after fabrication byutilizing heating elements included in the acoustical resonator and/orby adjusting the thickness of a tuning layer. In the preferredembodiment of the present invention, the electrodes comprise Mo layers.One embodiment of the present invention is constructed on a Si₃ N₄membrane, thus forming a composite resonator where the acoustic pathincludes a non-piezoelectric medium. A second embodiment of the presentinvention is constructed such that it is suspended over a substrate onmetallic columns. In the preferred embodiment of the present invention,the electrodes are deposited by a method that minimizes the stress inthe electrodes and the piezoelectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is bottom view of a film bulk acoustic resonator according to thepresent invention.

FIG. 2 is a cross-sectional view of the film bulk acoustic resonatorshown in FIG. 1.

FIG. 3 is a schematic diagram of an electrical circuit that isequivalent to a film bulk acoustic resonator.

FIG. 4 is a cross-sectional view of a stacked bulk acoustic resonator.

FIG. 5 is a schematic diagram of an electrical circuit that isequivalent to a stacked bulk acoustic resonator.

FIGS. 6 and 7 are cross-sectional views of a stacked bulk acousticresonator at different stages in the fabrication process.

FIG. 8 is a cross-sectional view of another embodiment of a film bulkacoustic resonator according to the present invention.

FIG. 9 is a cross-sectional view of yet another embodiment of a filmbulk acoustic resonator according to the present invention.

FIG. 10 is a cross-sectional view of another embodiment of a film bulkacoustic resonator according to the present invention.

FIG. 11 illustrates the preferred method of constructing a film bulkacoustic resonator according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In one embodiment of the present invention, the frequency of theresonator is shifted by heating the resonator to adjust the resonancefrequency to the desired frequency, hence, compensating for frequencyerrors arising from the finite manufacturing tolerances. Refer now toFIGS. 1 and 2. FIG. 1 is bottom view of a film bulk acoustic resonator(FBAR) 10 according to the present invention, and FIG. 2 is across-sectional view of FBAR 10 through line 15-16. FBAR 10 includesbottom and top electrodes 12 and 17, respectively, which sandwich aportion of sheet of PZ material 11. As will be explained in more detailbelow, FBAR 10 is constructed on a thin membrane 17. The temperature ofthe PZ material is controlled by resistive heating elements 13 and 14.

The preferred PZ material is aluminum nitride, AlN. The electrodes andheating elements used in resonator 10 will be assumed to be made fromaluminum; however, embodiments employing other materials will bediscussed in more detail below. For composite AlN resonators, it isfound experimentally that frequency of the resonance has a thermalcoefficient of frequency shift in the range of 0 to 200 ppm. Hence, byaltering the temperature of the FBAR over a rage of 200° C., a frequencyshift of 4% may be obtained. Since the resonator structure has a verysmall thermal mass, the temperature tuning is essentially instantaneous.

The heating elements can act both as resistive heaters and temperaturesensors. The change in resistivity of aluminum with temperature isbetween 0.3% and 0.4% per °C. Hence, by measuring the current flowing inone or both of the heating elements, one can ascertain the temperatureof the FBAR. The correct temperature for any given device and operatingfrequency can be determined by tests at the time of manufacture.

An FBAR is electrically equivalent to the tank circuit shown in FIG. 3.A cross-sectional view of an alternative resonator design, referred toas a stacked bulk acoustic resonator (SBAR) is shown in FIG. 4 at 40.SBAR 40 is a three terminal device having electrodes 41-43 which areseparated by PZ material 44. The electrical equivalent circuit for SBAR40 shown in FIG. 5.

The preferred PZ material for both SBAR and FBAR resonators is AlN.However, ZnO and lead zirconate titantate (PZT) may also be used. Ingeneral, the PZ material should have good thermal conductivity; however,the conductivity should not be so high as to cause significant heatloss. The preferred materials have a reasonably high electromechanicalcoupling constant and low dielectric constant.

Ideally the PZ layer would be epitaxial. This would minimize dispersivelosses in the acoustic signal propagation through the layer.Unfortunately, epitaxial layers are not economically feasible withpresent technology. Satisfactory performance can be obtained, however,as long as the PZ layer is highly ordered. In the preferred embodimentof the present invention, the PZ layer is columnar in nature, consistingof domains that extend from the bottom electrode to the top electrode.Each domain is a single crystal; hence, dispersive losses at the grainboundaries are minimized.

The nature of the PZ layer is determined by the bottom electrode and thefilm growth conditions. The bottom electrode must be an orderedstructure. As will be discussed in more detail below, the preferredembodiment of the present invention uses Mo electrodes. The AlN layer ispreferably deposited on the bottom electrode by a sputtering process.The parameters of the sputtering system are adjusted to provide columnargrowth of the AlN layer.

It is important to note that the electrodes are part of the acousticpath. Hence, the material from which the electrodes are constructed isalso important in determining the properties of the filter. Prior artFBAR and SBAR devices are constructed using gold or aluminum electrodes.These electrodes materials are preferred in the prior art because of theextensive technology that has been developed to deposit these materialsduring conventional integrated circuit fabrication.

The preferred embodiment of the present invention utilizes Mo, Ti, or Wfor the electrodes because of the low thermo-elastic losses of thesematerials. For example, Mo has approximately 56 times lessthermo-elastic loss than Al. The use of these materials in the past hasbeen hampered by the ability to make low stress layers of thesematerials. As will be explained in more detail below, the depositionmethod of the present invention overcomes these difficulties.

Refer now to FIGS. 6 and 7 which are cross-sectional views of an SBAR100 at different stages in the fabrication process. SBAR 100 ispreferably constructed on a silicon wafer 102 on which a Si₃ N₄ layer104 has been deposited. After deposition of layer 104, the back side ofwafer 102 is etched to form a cavity 103. In the preferred embodiment ofthe present invention, the etching is carried out in two steps. In thefirst step, approximately 80% of the silicon is removed with a KOH etchwhich is a strong base etchant. This operation will be referred to aspre-slotting in the following discussion. The amount of material removedis chosen such that the wafer is not materially weakened by the removalof the material, and hence, no special precautions are required in thehandling of the pre-slotted wafers during the subsequent processing. Theremainder of the silicon is removed in a second step described below.

After etching cavity 103, the metalization for the bottom electrode 107and the heaters 108 is deposited on the surface of Si₃ N₄ layer 104. Alayer of AlN 106 is then deposited over the heaters and bottomelectrode. A second electrode 109 is then deposited on the surface oflayer 106. Next, a second layer of AlN 110 is deposited and the thirdelectrode 112 deposited on top of layer 110. If an FBAR were beingfabricated instead of an SBAR, layer 110 and electrode 112 would beomitted.

After completing the fabrication of the top electrode 112, the remainderof the silicon in cavity 103 is removed by a slow etching process thatis more easily controlled than the KOH described above. In the preferredembodiment of the present invention, the remaining silicon is removedusing a tetra-methyl-ammonium hydroxide (TMAH) etching solution. Incontrast to strong base etchants, the TMAH, properly doped with siliconions, will not attack Al, AlN, or oxides. TMAH is, however, a muchslower acting etchant than KOH. For this reason, the wafer waspre-slotted as described above. The removal of the remaining siliconleaves the SBAR suspended on a Si₃ N₄ membrane. In the preferredembodiment of the present invention, the Si₃ N₄ membrane is typicallybetween 0.2μ to 1μ.

The resonance frequency of an FBAR or SBAR is, among other things,determined by the acoustic path between the two air interfaces on eachside of the device. Refer now to FIG. 8 which is a cross-sectional viewof a FBAR 200. FBAR 200 is constructed from a PZ layer 206 that issandwiched between electrodes 207 and 209. FBAR 200 is constructed on aSi₃ N₄ layer 204 which was deposited on a silicon substrate 202 asdescribed above. The resonance frequency of FBAR 200 is determined bythe length of the acoustic path 220 between the air interface on the topside of electrode 209 and the air interface on the bottom side of Si₃ N₄layer 204.

The accuracy with which acoustic path 220 may be fixed depends on theprecision with which the thicknesses of the various layers arecontrolled during the fabrication process. It would be advantageous tobe able to adjust acoustic path 220 after fabrication to correct for anyerrors in the fabrication process. The present invention provides twomethods for accomplishing this adjustment.

The first method is illustrated in FIG. 9 which is a cross-sectionalview of an FBAR 250 having an additional layer 224 on the underside ofthe Si₃ N₄ layer. In the presence of layer 224, the acoustical path isincreased as shown at 224. In the preferred embodiment of the presentinvention, layer 224 is a conductor with a resistivity that issufficiently high to allow layer 224 or a portion thereof to beevaporated by passing a current through layer 224. As the thickness oflayer 224 is changed, the resonance frequency of FBAR 250 will increase.Hence, in this embodiment of the present invention, the fabricationparameters are chosen such that FBAR 250 has a resonance frequency whichis slightly below the desired frequency. In post fabrication testing,the frequency is measured and material from layer 224 is evaporateduntil the frequency increases to the desired value.

In the preferred embodiment of the present invention, layer 224 isconstructed from Mo. However, other materials will be apparent to thoseskilled in the art. For example, layer 224 may be constructed from Al,W, Au, Pt, or Ti.

An alternative method for adjusting the acoustical path, and hence, theresonance frequency of an SBAR or FBAR according to the presentinvention is illustrated in FIG. 10 which is a cross-sectional view ofan FBAR 260. FBAR 260 is fabricated as described above and then mountedon a surface 255 which includes a plurality of metal "fuse" elements 265which are positioned so as to be inside cavity 262. By passing currentthrough one of the fuse elements, the metal of the fuse elementevaporates and is deposited on the inside of cavity 262. This results ina film 267 which increases the thickness of the acoustic path 272. Onceagain, tests of the device after fabrication are used to determine theamount of material that is to be evaporated from elements 265. Fuseelements 265 can be constructed from the same material as used for layer224 discussed above.

It should be noted that the methods for tuning of the resonancefrequency discussed with respect to FIGS. 9 and 10 may be applied to aconventional SBAR or FBAR or to an FBAR or SBAR having heating elementssuch as discussed above with reference to FIGS. 6 and 7.

The above-described embodiments of the present invention wereconstructed by depositing the various layers on a silicon wafer and thenetching the backside of the wafer to form a thin membrane on which theFBAR or SBAR was suspended. While this method of construction issatisfactory for devices having only SBAR or FBAR elements, it does notlend itself to construction of FBAR or SBAR elements on wafers havingother circuitry.

Refer now to FIG. 11 which is a cross-sectional view of an FBAR 300 thatis constructed over a silicon wafer 301 utilizing the preferredfabrication method. FBAR 300 is constructed as follows. First, a lowtemperature silicon oxide layer 302 is deposited on silicon substrate301. Vias are then opened in layer 302 to provide paths to siliconsubstrate 301. The vias may be opened over pads having connections tothe circuit elements that are to connect to the electrodes of the FBARor over insulating regions on silicon substrate 301. Exemplary vias areshown at 303 and 304. Via 303 is used to make connections to the bottomelectrode, and via 304 is used to make connection to the top electrode.Additional vias are also opened at other locations to provide columnsfor supporting the final FBAR. The vias must be opened using a dry etchprocess that does not disturb the remainder of the low temperaturesilicon oxide layer 302. The vias should be located outside of theacoustical path.

Next, the vias are filled with metal. This is accomplished utilizingconventional deposition techniques, and hence, the metal deposition willnot be discussed in more detail here. A metal layer 305 is thendeposited over the low temperature silicon oxide layer and filled vias.Metal layer 305 is patterned to act as the bottom electrode and theheating layer of FBAR 300. If any of the filled vias are not to makecontact with the bottom electrode, metal layer 305 is patterned to avoidthe vias in question. Such an area is shown over via 304. Next, a layerof PZ material 306 is deposited over metal layer 305. PZ layer 306 ispreferably AlN. Any vias that are needed for making connections to thetop electrode of FBAR 300 are then opened and filled with metal. Such afilled via is shown at 307. The top electrode 308 is then deposited.

Finally, the low temperature oxide layer 302 is removed by a diluteliquid HF etch after providing protective coatings for areas that wouldbe sensitive to the HF solution. This leaves FBAR 300 suspended oversilicon substrate 301 on metal supports.

The above-described embodiments of the present invention utilize metalelectrodes that are preferably constructed from molybdenum. The mannerin which the Mo is deposited is important to the yield and function ofthe devices. If the Mo is deposited in a manner that leads to a stressedmetal layer, the stress may be sufficient to break the bond between themetal layer and the layer on which it is deposited. Hence, in thepreferred embodiment of the present invention, the conditions underwhich the Mo is deposited are adjusted to provide a low stress Mo layer.

The Mo is preferably deposited using sputtering. The parameters of thedeposition such as pressure and gas flow rate determine the degree towhich the resulting Mo layer is stressed. These parameters must beadjusted for the particular arrangement of the sputtering system. In thepreferred embodiment of the present invention, the pressure in thechamber is used as the control variable. The stress in the Mo layer ismeasured as a function of the pressure. The pressure that generates thelayer with the least stress is used in the depositions.

The stress in the Mo layer may be measured by depositing the layer on asilicon wafer and then determining the degree to which the depositedlayer caused the silicon wafer to bow. For example, if the Mo layer iscompressively stressed, the wafer will become convexly bowed. The degreeof bowing may be determined by optical interference measurements. Suchmeasurements are conventional in the art, and hence, will not bediscussed in more detail here.

Similarly, it is important that the PZ layer also be deposited in a formwhich minimizes the stress in the layer. The procedure described abovewith reference to the Mo layer may also be used to determine the optimumconditions for depositing the PZ material.

While the above embodiments of the present invention have not shown a"caping" layer for protecting the top electrode, it will be apparent tothose skilled in the art that such a layer may be desirable. It has beenomitted from the drawings to simplify the drawings. If a caping layer isused, it becomes part of the acoustic path, and hence, must be takeninto account in setting the thicknesses of the various components so asto arrive at a resonator having the proper resonance frequency.

Various modifications to the present invention will become apparent tothose skilled in the art from the foregoing description and accompanyingdrawings. Accordingly, the present invention is to be limited solely bythe scope of the following claims.

What is claimed is:
 1. A high-Q, acoustical resonator, comprising:abottom electrode layer having an ordered structure, a thickness and anacoustical attenuation; a thin-film PZ layer comprising AlN deposited onsaid lower electrode layer with an ordered structure imparted thereon bysaid ordered structure of said lower electrode layer, said PZ layerhaving a top surface and a thickness; and a top electrode layer adjacentto said top surface of said PZ layer, the top electrode layer having athickness and an acoustical attenuation, wherein:the top electrodelayer, the PZ layer, and the bottom electrode layer collectivelyconsitute an acoustic path having a Q, the top electrode layer and thebottom electrode layer each having a thickness relative to the thicknessof the PZ layer such that the top electrode layer and the bottomelectrode layer collectively constitute such a proportion of theacoustic path that the top electrode layer and the bottom electrodelayer having a high acoustical attenuation causes the acoustic path tohave a low Q, and both of said top electrode layer and said bottomelectrode layer consist essentially of at least one metal chosen fromthe group consisting of Mo and W to minimize the acoustical attenuationof said top electrode layer and said bottom electrode layer, and therebyto maximize the Q of the acoustical resonator.
 2. The acousticalresonator of claim 1 further comprising a layer of Si₃ N₄ adjacent tosaid bottom electrode layer, said bottom electrode being sandwichedbetween said layer of Si₃ N₄ and said PZ layer.
 3. The acousticalresonator of claim 2 wherein the side of said Si₃ N₄ layer remote fromsaid PZ layer comprises a region that is in contact with air.
 4. Theacoustical resonator of claim 1, wherein:said PZ layer includes an upperPZ layer and a lower PZ layer, said lower PZ layer being deposited onsaid bottom electrode layer, said top electrode layer being deposited onsaid upper PZ layer; the acoustical resonator additionally comprises amiddle electrode layer deposited on said lower PZ layer, said middleelectrode layer constituting part of said acoustic path and consistingessentially of at least one metal chosen from the group consisting of Moand W; and at least part of said upper PZ layer is deposited on saidmiddle electrode layer.
 5. An acoustical resonator, comprising:athin-film PZ layer having top and bottom surfaces; a bottom electrodelayer adjacent to said bottom surface of said PZ layer; a top electrodelayer adjacent to said top surface of said PZ layer, said top electrodelayer, said PZ layer, and said bottom electrode layer collectivelyconstituting a structure having a resonant frequency, said resonantfrequency depending on a temperature of said PZ layer; a layer of Si₃ N₄adjacent to said bottom electrode layer, said bottom electrode beingsandwiched between said layer of Si₃ N₄ and said PZ layer; and heatingmeans for increasing said temperature of said PZ layer to apredetermined temperature whereat said resonant frequency is equal to apredetermined frequency, said heating means additionally indicating saidtemperature of said PZ layer.
 6. The acoustical resonator of claim 5,wherein:said PZ layer includes an upper PZ layer and a lower PZ layer,said lower PZ layer being deposited on said bottom electrode layer, saidtop electrode layer being deposited on said upper PZ layer; theacoustical resonator additionally comprises a middle electrode layerdeposited on said lower PZ layer; and at least part of said upper PZlayer is deposited on said middle electrode layer.
 7. The acousticalresonator of claim 6 wherein the side of said Si₃ N₄ layer remote fromsaid PZ layer comprises a region that is in contact with air.
 8. Anacoustical resonator, comprising:a thin-film PZ layer comprising AlN andhaving top and bottom surfaces; a bottom electrode layer adjacent tosaid bottom surface of said PZ layer; a top electrode layer adjacent tosaid top surface of said PZ layer, said top electrode layer, said PZlayer, and said bottom electrode layer collectively constituting astructure having a resonant frequency, said resonant frequency dependingon a temperature of said PZ layer; and heating means for increasing saidtemperature of said PZ layer to a predetermined temperature whereat saidresonant frequency is equal to a predetermined frequency, said heatingmeans additionally indicating said temperature of said PZ layer.
 9. Theacoustical resonator of claim 8, wherein:said PZ layer includes an upperPZ layer and a lower PZ layer, said lower PZ layer being deposited onsaid bottom electrode layer, said top electrode layer being deposited onsaid upper PZ layer; the acoustical resonator additionally comprises amiddle electrode layer deposited on said lower PZ layer; and at leastpart of said upper PZ layer is deposited on said middle electrode layer.10. An acoustical resonator, comprising:a PZ layer having top and bottomsurfaces; a bottom electrode layer adjacent to said bottom surface ofsaid PZ layer; a top electrode layer adjacent to said top surface ofsaid PZ layer; a layer of Si₃ N₄ adjacent to said bottom electrodelayer, said bottom electrode being sandwiched between said layer of Si₃N₄ and said PZ layer; and heating means for heating said PZ layer, saidheating means comprising a metallic trace in contact with said Si₃ N₄layer.
 11. The acoustical resonator of claim 10, wherein said PZ layercomprises AlN.
 12. The acoustical resonator of claim 10, wherein theside of said Si₃ N₄ layer remote from said PZ layer comprises a regionthat is in contact with air.
 13. The acoustical resonator of claim 10,wherein said heating means is additionally sandwiched between said PZlayer and said Si₃ N₄ layer.
 14. The acoustical resonator of claim 10,wherein said bottom electrode and said heating means are parts of acommon metallization layer.
 15. The acoustical resonator of claim 10,wherein:said PZ layer includes an upper PZ layer and a lower PZ layer,said lower PZ layer being deposited on said bottom electrode layer, saidtop electrode layer being deposited on said upper PZ layer; theacoustical resonator additionally comprises a middle electrode layerdeposited on said lower PZ layer; and at least part of said upper PZlayer is deposited on said middle electrode layer.
 16. An acousticalresonator, comprising:a thin-film PZ layer having top and bottomsurfaces; a bottom electrode layer adjacent to said bottom surface ofsaid PZ layer; a top electrode layer adjacent to said top surface ofsaid PZ layer; and an evaporable tuning layer acoustically coupled tosaid PZ layer, part of said tuning layer being evaporated afterfabrication of said acoustical resonator to provide a predeterminedresonance frequency for said acoustical resonator, said tuning layercomprising a metallic layer and means for causing a current to passthrough said metallic layer thereby causing a portion of said metalliclayer to vaporize.
 17. The acoustical resonator of claim 16,wherein:said PZ layer includes an upper PZ layer and a lower PZ layer,said lower PZ layer being deposited on said bottom electrode layer, saidtop electrode layer being deposited on said upper PZ layer; theacoustical resonator additionally comprises a middle electrode layerdeposited on said lower PZ layer; and at least part of said upper PZlayer is deposited on said middle electrode layer.
 18. An acousticalresonator, comprising:a PZ layer having top and bottom surfaces; abottom electrode layer adjacent to said bottom surface of said PZ layer;a layer of Si₃ N₄ adjacent to said bottom electrode layer, said bottomelectrode being sandwiched between said layer of Si₃ N₄ and said PZlayer; a top electrode layer adjacent to said top surface of said PZlayer; and a tuning layer in acoustical contact with said PZ layer, thethickness of said tuning layer being adjusted after fabrication of saidacoustical resonator to provide a predetermined resonance frequency forsaid acoustical resonator.
 19. The acoustical resonator of claim 18,wherein the side of said Si₃ N₄ layer remote from said PZ layercomprises a region that is in contact with air.
 20. The acousticalresonator of claim 19 wherein said tuning layer comprises means fordepositing a metallic layer on said acoustical resonator.
 21. Theacoustical resonator of claim 18, wherein said tuning layer is formed onthe side of said Si₃ N₄ layer remote from said PZ layer.
 22. Theacoustical resonator of claim 21, wherein said tuning layer comprises ametallic layer and means for causing a current to pass through saidmetallic layer thereby causing a portion of said metallic layer tovaporize.
 23. The acoustical resonator of claim 18, wherein said tuninglayer comprises a metallic layer and means for causing a current to passthrough said metallic layer thereby causing a portion of said metalliclayer to vaporize.
 24. The acoustical resonator of claim 18, whereinsaid tuning layer comprises means for depositing a metallic layer onsaid layer of Si₃ N₄.
 25. The acoustical resonator of claim 18,wherein:said PZ layer includes an upper PZ layer and a lower PZ layer,said lower PZ layer being deposited on said bottom electrode layer, saidtop electrode layer being deposited on said upper PZ layer; theacoustical resonator additionally comprises a middle electrode layerdeposited on said lower PZ layer; and at least part of said upper PZlayer is deposited on said middle electrode layer.